Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor: Fid-Bau Portal

Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor

Jeong, J. K. / Um, M. Y. / Na, H. J. / Kim, B. S. / Song, I. B. / Kim, H. J.

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Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor

Jeong, J. K. / Um, M. Y. / Na, H. J. / Kim, B. S. / Song, I. B. / Kim, H. J.

Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor

Jeong, J. K. / Um, M. Y. / Na, H. J. / Kim, B. S. / Song, I. B. / Kim, H. J.

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Title:

Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor

Contributors:

Jeong, J. K. (author) / Um, M. Y. (author) / Na, H. J. (author) / Kim, B. S. (author) / Song, I. B. (author) / Kim, H. J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 267-270

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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