Homoepitaxial Growth of Al-Doped 4H-SiC using Bis-Trimethylsilylmethane Precursor: Fid-Bau Portal

Homoepitaxial Growth of Al-Doped 4H-SiC using Bis-Trimethylsilylmethane Precursor

Song, H. K. / Um, M. Y. / Na, H. J. / Kim, D. H. / Song, I. B. / Jung, S. Y. / Jeong, J. K. / Lee, J. B. / Kim, H. J.

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Homoepitaxial Growth of Al-Doped 4H-SiC using Bis-Trimethylsilylmethane Precursor

Song, H. K. / Um, M. Y. / Na, H. J. / Kim, D. H. / Song, I. B. / Jung, S. Y. / Jeong, J. K. / Lee, J. B. / Kim, H. J.

Homoepitaxial Growth of Al-Doped 4H-SiC using Bis-Trimethylsilylmethane Precursor

Song, H. K. / Um, M. Y. / Na, H. J. / Kim, D. H. / Song, I. B. / Jung, S. Y. / Jeong, J. K. / Lee, J. B. / Kim, H. J.

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Title:

Homoepitaxial Growth of Al-Doped 4H-SiC using Bis-Trimethylsilylmethane Precursor

Contributors:

Song, H. K. (author) / Um, M. Y. (author) / Na, H. J. (author) / Kim, D. H. (author) / Song, I. B. (author) / Jung, S. Y. (author) / Jeong, J. K. (author) / Lee, J. B. (author) / Kim, H. J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 233-236

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Jeong, J. K. / Um, M. Y. / Na, H. J. et al. | British Library Online Contents | 2002

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Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor

Song, H.K. / Lee, J.H. / Oh, M.S. et al. | British Library Online Contents | 2009

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MacMillan, M. F. / Loboda, M. J. / Chung, G. et al. | British Library Online Contents | 2006

Homoepitaxial Growth of 4H-SiC Using CH~3Cl Carbon Precursor

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