Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors: Fid-Bau Portal

Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors

Song, H. K. / Seo, H. S. / Moon, J. H. / Yim, J. H. / Lee, J. H. / Kwon, S. Y. / Na, H. J. / Kim, H. J.

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Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors

Song, H. K. / Seo, H. S. / Moon, J. H. / Yim, J. H. / Lee, J. H. / Kwon, S. Y. / Na, H. J. / Kim, H. J.

Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors

Song, H. K. / Seo, H. S. / Moon, J. H. / Yim, J. H. / Lee, J. H. / Kwon, S. Y. / Na, H. J. / Kim, H. J.

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Title:

Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors

Contributors:

Song, H. K. (author) / Seo, H. S. (author) / Moon, J. H. (author) / Yim, J. H. (author) / Lee, J. H. (author) / Kwon, S. Y. (author) / Na, H. J. (author) / Kim, H. J. (author) / Wright, N. / Johnson, C. M.

Published in:

Silicon Carbide and Related Materials 2006 ; 113-116

MATERIALS SCIENCE FORUM ; 556/557

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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