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Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes
Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes
Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes
Vang, H. (Autor:in) / Scharnholz, S. (Autor:in) / Raynaud, C. (Autor:in) / Lazar, M. (Autor:in) / Paques, G. (Autor:in) / Planson, D. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 1011-1014
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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