High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications: Fid-Bau Portal

High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications

Cheng, L. / Martin, P. / Mazzola, M.S. / Sheridan, D.C. / Kelly, R.L. / Bondarenko, V. / Morrison, S. / Gray, R. / Tian, G. / Scofield, J.D.

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High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications

Cheng, L. / Martin, P. / Mazzola, M.S. / Sheridan, D.C. / Kelly, R.L. / Bondarenko, V. / Morrison, S. / Gray, R. / Tian, G. / Scofield, J.D.

High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications

Cheng, L. / Martin, P. / Mazzola, M.S. / Sheridan, D.C. / Kelly, R.L. / Bondarenko, V. / Morrison, S. / Gray, R. / Tian, G. / Scofield, J.D.

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Document information

Title:

High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications

Contributors:

Cheng, L. (author) / Martin, P. (author) / Mazzola, M.S. (author) / Sheridan, D.C. (author) / Kelly, R.L. (author) / Bondarenko, V. (author) / Morrison, S. (author) / Gray, R. (author) / Tian, G. (author) / Scofield, J.D. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 1051-1054

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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