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High-Temperature Operation of 50 A (1600 A/cm^2), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications
High-Temperature Operation of 50 A (1600 A/cm^2), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications
High-Temperature Operation of 50 A (1600 A/cm^2), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications
Cheng, L. (author) / Sankin, I. (author) / Bondarenko, V. (author) / Mazzola, M.S. (author) / Scofield, J.D. (author) / Sheridan, D.C. (author) / Martin, P. (author) / Casady, J.R.B. (author) / Casady, J.B. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 1055-1058
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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