1270V, 1.21m Omega ·cm^2 SiC Buried Gate Static Induction Transistors (SiC-BGSITs): Fid-Bau Portal

1270V, 1.21m Omega ·cm^2 SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

Tanaka, Y. / Yano, K. / Okamoto, M. / Takatsuka, A. / Arai, K. / Yatsuo, T.

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1270V, 1.21m Omega ·cm^2 SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

Tanaka, Y. / Yano, K. / Okamoto, M. / Takatsuka, A. / Arai, K. / Yatsuo, T.

1270V, 1.21m Omega ·cm^2 SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

Tanaka, Y. / Yano, K. / Okamoto, M. / Takatsuka, A. / Arai, K. / Yatsuo, T.

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Check availability in my library

Order at Subito €

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Title:

1270V, 1.21m Omega ·cm^2 SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

Contributors:

Tanaka, Y. (author) / Yano, K. (author) / Okamoto, M. (author) / Takatsuka, A. (author) / Arai, K. (author) / Yatsuo, T. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 1071-1074

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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