Three Dimensional Analysis of Turnoff Operation of SiC Buried Gate Static Induction Transistors (BG-SITs): Fid-Bau Portal

Three Dimensional Analysis of Turnoff Operation of SiC Buried Gate Static Induction Transistors (BG-SITs)

Yano, K. / Tanaka, Y. / Yatsuo, T. / Takatsuka, A. / Okamoto, M. / Arai, K.

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Three Dimensional Analysis of Turnoff Operation of SiC Buried Gate Static Induction Transistors (BG-SITs)

Yano, K. / Tanaka, Y. / Yatsuo, T. / Takatsuka, A. / Okamoto, M. / Arai, K.

Three Dimensional Analysis of Turnoff Operation of SiC Buried Gate Static Induction Transistors (BG-SITs)

Yano, K. / Tanaka, Y. / Yatsuo, T. / Takatsuka, A. / Okamoto, M. / Arai, K.

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Check availability in my library

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Document information

Title:

Three Dimensional Analysis of Turnoff Operation of SiC Buried Gate Static Induction Transistors (BG-SITs)

Contributors:

Yano, K. (author) / Tanaka, Y. (author) / Yatsuo, T. (author) / Takatsuka, A. (author) / Okamoto, M. (author) / Arai, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 1075-1078

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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