A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability
950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability
950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability
Matocha, K. (author) / Stum, Z. (author) / Arthur, S. (author) / Dunne, G. (author) / Stevanovic, L. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 1131-1134
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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