Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes: Fid-Bau Portal

Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes

Caldwell, J.D. / Stahlbush, R.E. / Glembocki, O.J. / Hobart, K.D. / Liu, K.X. / Tadjer, M.J.

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Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes

Caldwell, J.D. / Stahlbush, R.E. / Glembocki, O.J. / Hobart, K.D. / Liu, K.X. / Tadjer, M.J.

Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes

Caldwell, J.D. / Stahlbush, R.E. / Glembocki, O.J. / Hobart, K.D. / Liu, K.X. / Tadjer, M.J.

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Title:

Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes

Contributors:

Caldwell, J.D. (author) / Stahlbush, R.E. (author) / Glembocki, O.J. (author) / Hobart, K.D. (author) / Liu, K.X. (author) / Tadjer, M.J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 273-278

Publication date:

2009-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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