Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping: Fid-Bau Portal

Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping

Hoshino, N. / Tajima, M. / Naitoh, M. / Okuno, E. / Onda, S.

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Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping

Hoshino, N. / Tajima, M. / Naitoh, M. / Okuno, E. / Onda, S.

Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping

Hoshino, N. / Tajima, M. / Naitoh, M. / Okuno, E. / Onda, S.

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Title:

Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping

Contributors:

Hoshino, N. (author) / Tajima, M. (author) / Naitoh, M. (author) / Okuno, E. (author) / Onda, S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 349-352

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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