Evolution of D~1-Defect Center in 4H-SiC during High Temperature Annealing: Fid-Bau Portal

Evolution of D~1-Defect Center in 4H-SiC during High Temperature Annealing

Maximenko, S.I. / Freitas, J.A. / Garces, N.Y. / Glaser, E.R. / Fanton, M.A.

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Evolution of D~1-Defect Center in 4H-SiC during High Temperature Annealing

Maximenko, S.I. / Freitas, J.A. / Garces, N.Y. / Glaser, E.R. / Fanton, M.A.

Evolution of D~1-Defect Center in 4H-SiC during High Temperature Annealing

Maximenko, S.I. / Freitas, J.A. / Garces, N.Y. / Glaser, E.R. / Fanton, M.A.

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Check availability in my library

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Document information

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Document information

Title:

Evolution of D~1-Defect Center in 4H-SiC during High Temperature Annealing

Contributors:

Maximenko, S.I. (author) / Freitas, J.A. (author) / Garces, N.Y. (author) / Glaser, E.R. (author) / Fanton, M.A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 429-432

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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