A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites
Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites
Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites
Ottaviani, L. (author) / Kazan, M. (author) / Masri, P.M. (author) / Sauvage, T. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 525-528
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Competitive iron gettering between internal gettering sites and boron implantation in CZ-silicon
| British Library Online Contents | 2009
Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers
| British Library Online Contents | 2003
Gettering of Iron Using Electrically Inactive Boron Doped Layer
| British Library Online Contents | 1995
Gettering in silicon-on-insulator wafers with polysilicon layer
| British Library Online Contents | 2009
Gettering by heat thermal processing: application in crystalline silicon solar cells
| British Library Online Contents | 2004