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Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites
Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites
Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites
Ottaviani, L. (Autor:in) / Kazan, M. (Autor:in) / Masri, P.M. (Autor:in) / Sauvage, T. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 525-528
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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