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Basal Plane Dislocation Mitigation in 8^o Off-Cut 4H-SiC through In Situ Growth Interrupts during Chemical Vapor Deposition
Basal Plane Dislocation Mitigation in 8^o Off-Cut 4H-SiC through In Situ Growth Interrupts during Chemical Vapor Deposition
Basal Plane Dislocation Mitigation in 8^o Off-Cut 4H-SiC through In Situ Growth Interrupts during Chemical Vapor Deposition
VanMil, B.L. (author) / Stahlbush, R.E. (author) / Myers-Ward, R.L. (author) / Picard, Y.N. (author) / Kitt, S.A. (author) / McCrate, J.M. (author) / Katz, S.L. (author) / Gaskill, D.K. (author) / Eddy, C.R. (author)
MATERIALS SCIENCE FORUM ; 615/617 ; 61-66
2009-01-01
6 pages
Article (Journal)
English
DDC:
620.11
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