Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density: Fid-Bau Portal

Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density

Tanaka, T. / Kawabata, N. / Mitani, Y. / Tomita, N. / Tarutani, M. / Kuroiwa, T. / Toyoda, Y. / Imaizumi, M. / Sumitani, H. / Yamakawa, S.

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Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density

Tanaka, T. / Kawabata, N. / Mitani, Y. / Tomita, N. / Tarutani, M. / Kuroiwa, T. / Toyoda, Y. / Imaizumi, M. / Sumitani, H. / Yamakawa, S.

Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density

Tanaka, T. / Kawabata, N. / Mitani, Y. / Tomita, N. / Tarutani, M. / Kuroiwa, T. / Toyoda, Y. / Imaizumi, M. / Sumitani, H. / Yamakawa, S.

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Title:

Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density

Contributors:

Tanaka, T. (author) / Kawabata, N. (author) / Mitani, Y. (author) / Tomita, N. (author) / Tarutani, M. (author) / Kuroiwa, T. (author) / Toyoda, Y. (author) / Imaizumi, M. (author) / Sumitani, H. (author) / Yamakawa, S. (author)

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 91-94

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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