Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with V~B~R> 4 kV: Fid-Bau Portal

Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with V~B~R> 4 kV

Thomas, B. / Hecht, C. / Kallinger, B.

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Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with V~B~R> 4 kV

Thomas, B. / Hecht, C. / Kallinger, B.

Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with V~B~R> 4 kV

Thomas, B. / Hecht, C. / Kallinger, B.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with V~B~R> 4 kV

Contributors:

Thomas, B. (author) / Hecht, C. (author) / Kallinger, B. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 77-80

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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