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    Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics

    New search for: Rogdakis, K.
    New search for: Lee, S.Y.
    New search for: Kim, D.J.
    New search for: Lee, S.K.
    New search for: Bano, E.
    New search for: Zekentes, K.

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    Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics

    New search for: Rogdakis, K.
    New search for: Lee, S.Y.
    New search for: Kim, D.J.
    New search for: Lee, S.K.
    New search for: Bano, E.
    New search for: Zekentes, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics

    New search for: Rogdakis, K.
    New search for: Lee, S.Y.
    New search for: Kim, D.J.
    New search for: Lee, S.K.
    New search for: Bano, E.
    New search for: Zekentes, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics

    Contributors:

    Rogdakis, K. (author) / Lee, S.Y. (author) / Kim, D.J. (author) / Lee, S.K. (author) / Bano, E. (author) / Zekentes, K. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 615/617 ; 235-238

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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