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    Simulation of Ion Implantation in SiC: Dopant Profiling and Activation

    New search for: Morata, S.
    New search for: Torregrosa, F.
    New search for: Bouchet, T.

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    Simulation of Ion Implantation in SiC: Dopant Profiling and Activation

    New search for: Morata, S.
    New search for: Torregrosa, F.
    New search for: Bouchet, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Simulation of Ion Implantation in SiC: Dopant Profiling and Activation

    New search for: Morata, S.
    New search for: Torregrosa, F.
    New search for: Bouchet, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Simulation of Ion Implantation in SiC: Dopant Profiling and Activation

    Contributors:

    Morata, S. (author) / Torregrosa, F. (author) / Bouchet, T. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 615/617 ; 449-452

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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