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Simulation of Ion Implantation in SiC: Dopant Profiling and Activation
Simulation of Ion Implantation in SiC: Dopant Profiling and Activation
Simulation of Ion Implantation in SiC: Dopant Profiling and Activation
Morata, S. (Autor:in) / Torregrosa, F. (Autor:in) / Bouchet, T. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 449-452
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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