Comparison between Polishing Etching of On and Off-Axis C and Si-Faces of 4H-SiC Wafers: Fid-Bau Portal

Comparison between Polishing Etching of On and Off-Axis C and Si-Faces of 4H-SiC Wafers

Kosciewicz, K. / Strupinski, W. / Olszyna, A.

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Comparison between Polishing Etching of On and Off-Axis C and Si-Faces of 4H-SiC Wafers

Kosciewicz, K. / Strupinski, W. / Olszyna, A.

Comparison between Polishing Etching of On and Off-Axis C and Si-Faces of 4H-SiC Wafers

Kosciewicz, K. / Strupinski, W. / Olszyna, A.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Comparison between Polishing Etching of On and Off-Axis C and Si-Faces of 4H-SiC Wafers

Contributors:

Kosciewicz, K. (author) / Strupinski, W. (author) / Olszyna, A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 597-600

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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