A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Avalanche Breakdown Characteristics of 4H-SiC Graded p^+-n Junction Formed with Aluminum Ion-Implanted p^+-Layer
Avalanche Breakdown Characteristics of 4H-SiC Graded p^+-n Junction Formed with Aluminum Ion-Implanted p^+-Layer
Avalanche Breakdown Characteristics of 4H-SiC Graded p^+-n Junction Formed with Aluminum Ion-Implanted p^+-Layer
Ono, S. (author) / Katakami, S. (author) / Arai, M. (author)
MATERIALS SCIENCE FORUM ; 615/617 ; 675-678
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
| British Library Online Contents | 2007
Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors
| British Library Online Contents | 2012
| British Library Online Contents | 2014
High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation
| British Library Online Contents | 2002
Avalanche transformation during breakdown in uniform field
| TIBKAT | 1952