Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET: Fid-Bau Portal

Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET

Poggi, A. / Moscatelli, F. / Solmi, S. / Nipoti, R. / Tamarri, F. / Pizzochero, G.

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Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET

Poggi, A. / Moscatelli, F. / Solmi, S. / Nipoti, R. / Tamarri, F. / Pizzochero, G.

Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET

Poggi, A. / Moscatelli, F. / Solmi, S. / Nipoti, R. / Tamarri, F. / Pizzochero, G.

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Title:

Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET

Contributors:

Poggi, A. (author) / Moscatelli, F. (author) / Solmi, S. (author) / Nipoti, R. (author) / Tamarri, F. (author) / Pizzochero, G. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 761-764

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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