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Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs
Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs
Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs
Rao, R.R. (Autor:in) / Matocha, K. (Autor:in) / Tilak, V. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 797-800
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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