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    Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs

    New search for: Kosugi, R.
    New search for: Okamoto, M.
    New search for: Suzuki, S.
    New search for: Senzaki, J.
    New search for: Harada, S.
    New search for: Fukuda, K.
    New search for: Arai, K.

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    Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs

    New search for: Kosugi, R.
    New search for: Okamoto, M.
    New search for: Suzuki, S.
    New search for: Senzaki, J.
    New search for: Harada, S.
    New search for: Fukuda, K.
    New search for: Arai, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs

    New search for: Kosugi, R.
    New search for: Okamoto, M.
    New search for: Suzuki, S.
    New search for: Senzaki, J.
    New search for: Harada, S.
    New search for: Fukuda, K.
    New search for: Arai, K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
    Title:

    Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs

    Contributors:

    Kosugi, R. (author) / Okamoto, M. (author) / Suzuki, S. (author) / Senzaki, J. (author) / Harada, S. (author) / Fukuda, K. (author) / Arai, K. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 389/393 ; 1049-1052

    Publication date:

    2002-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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