Channel Hot-Carrier Effect of 4H-SiC MOSFET: Fid-Bau Portal

Channel Hot-Carrier Effect of 4H-SiC MOSFET

Yu, L.C. / Cheung, K.P. / Suehle, J.S. / Campbell, J.P. / Sheng, K. / Lelis, A.J. / Ryu, S.H.

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Channel Hot-Carrier Effect of 4H-SiC MOSFET

Yu, L.C. / Cheung, K.P. / Suehle, J.S. / Campbell, J.P. / Sheng, K. / Lelis, A.J. / Ryu, S.H.

Channel Hot-Carrier Effect of 4H-SiC MOSFET

Yu, L.C. / Cheung, K.P. / Suehle, J.S. / Campbell, J.P. / Sheng, K. / Lelis, A.J. / Ryu, S.H.

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Check availability in my library

Order at Subito €

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Document information

Title:

Channel Hot-Carrier Effect of 4H-SiC MOSFET

Contributors:

Yu, L.C. (author) / Cheung, K.P. (author) / Suehle, J.S. (author) / Campbell, J.P. (author) / Sheng, K. (author) / Lelis, A.J. (author) / Ryu, S.H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 813-816

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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