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Channel Hot-Carrier Effect of 4H-SiC MOSFET
Channel Hot-Carrier Effect of 4H-SiC MOSFET
Channel Hot-Carrier Effect of 4H-SiC MOSFET
Yu, L.C. (Autor:in) / Cheung, K.P. (Autor:in) / Suehle, J.S. (Autor:in) / Campbell, J.P. (Autor:in) / Sheng, K. (Autor:in) / Lelis, A.J. (Autor:in) / Ryu, S.H. (Autor:in)
MATERIALS SCIENCE FORUM ; 615/617 ; 813-816
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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