GaN Epitaxial Growth on Sapphire Substrate with Al Buffer Layer Prepared by E-Beam Evaporation: Fid-Bau Portal

GaN Epitaxial Growth on Sapphire Substrate with Al Buffer Layer Prepared by E-Beam Evaporation

Hwang, H.H. / Kim, J.K. / Choi, J.M. / Lee, W.J. / Kim, I.S. / Shin, B.C. / Lee, H.Y.

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GaN Epitaxial Growth on Sapphire Substrate with Al Buffer Layer Prepared by E-Beam Evaporation

Hwang, H.H. / Kim, J.K. / Choi, J.M. / Lee, W.J. / Kim, I.S. / Shin, B.C. / Lee, H.Y.

GaN Epitaxial Growth on Sapphire Substrate with Al Buffer Layer Prepared by E-Beam Evaporation

Hwang, H.H. / Kim, J.K. / Choi, J.M. / Lee, W.J. / Kim, I.S. / Shin, B.C. / Lee, H.Y.

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Check availability in my library

Order at Subito €

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Document information

Title:

GaN Epitaxial Growth on Sapphire Substrate with Al Buffer Layer Prepared by E-Beam Evaporation

Contributors:

Hwang, H.H. (author) / Kim, J.K. (author) / Choi, J.M. (author) / Lee, W.J. (author) / Kim, I.S. (author) / Shin, B.C. (author) / Lee, H.Y. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 935-938

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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