Atomic arrangement variations of 30^o in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing: Fid-Bau Portal

Atomic arrangement variations of 30^o in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing

Shin, J.W. / Lee, J.Y. / No, Y.S. / Kim, T.W. / Choi, W.K.

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Atomic arrangement variations of 30^o in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing

Shin, J.W. / Lee, J.Y. / No, Y.S. / Kim, T.W. / Choi, W.K.

Atomic arrangement variations of 30^o in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing

Shin, J.W. / Lee, J.Y. / No, Y.S. / Kim, T.W. / Choi, W.K.

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Check availability in my library

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Title:

Atomic arrangement variations of 30^o in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing

Contributors:

Shin, J.W. (author) / Lee, J.Y. (author) / No, Y.S. (author) / Kim, T.W. (author) / Choi, W.K. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 24 ; 2006-2010

Publication date:

2009-01-01

Size:

5 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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