Atomic Layer Deposition of Dielectrics on Ge and III-V Materials for Ultrahigh Performance Transistors: Fid-Bau Portal

Atomic Layer Deposition of Dielectrics on Ge and III-V Materials for Ultrahigh Performance Transistors

Wallace, R.M. / McIntyre, P.C. / Kim, J. / Nishi, Y.

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Atomic Layer Deposition of Dielectrics on Ge and III-V Materials for Ultrahigh Performance Transistors

Wallace, R.M. / McIntyre, P.C. / Kim, J. / Nishi, Y.

Atomic Layer Deposition of Dielectrics on Ge and III-V Materials for Ultrahigh Performance Transistors

Wallace, R.M. / McIntyre, P.C. / Kim, J. / Nishi, Y.

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Check availability in my library

Order at Subito €

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Document information

Title:

Atomic Layer Deposition of Dielectrics on Ge and III-V Materials for Ultrahigh Performance Transistors

Contributors:

Wallace, R.M. (author) / McIntyre, P.C. (author) / Kim, J. (author) / Nishi, Y. (author)

Published in:

MRS BULLETIN- MATERIALS RESEARCH SOCIETY ; 34 ; 493-503

Publication date:

2009-01-01

Size:

11 pages

ISSN:

0883-7694

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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