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Atomic layer deposition of CeO2/HfO2 gate dielectrics on Ge substrate

Maeng, W. J. / Oh, I. K. / Kim, W. H. / Kim, M. K. / Lee, C. W. / Lansalot-Matras, C. / Thompson, D. / Chu, S. / Kim, H.

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Atomic layer deposition of CeO2/HfO2 gate dielectrics on Ge substrate

Maeng, W. J. / Oh, I. K. / Kim, W. H. / Kim, M. K. / Lee, C. W. / Lansalot-Matras, C. / Thompson, D. / Chu, S. / Kim, H.

Atomic layer deposition of CeO2/HfO2 gate dielectrics on Ge substrate

Maeng, W. J. / Oh, I. K. / Kim, W. H. / Kim, M. K. / Lee, C. W. / Lansalot-Matras, C. / Thompson, D. / Chu, S. / Kim, H.

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Document information

Title:

Atomic layer deposition of CeO2/HfO2 gate dielectrics on Ge substrate

Contributors:

Maeng, W. J. (author) / Oh, I. K. (author) / Kim, W. H. (author) / Kim, M. K. (author) / Lee, C. W. (author) / Lansalot-Matras, C. (author) / Thompson, D. (author) / Chu, S. (author) / Kim, H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 321 ; 214-218

Publication date:

2014-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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