Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization: Fid-Bau Portal

Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization

Lin, Yu-Shu / Cheng, Po-Hsien / Huang, Kuei-Wen / Lin, Hsin-Chih / Chen, Miin-Jang

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Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization

Lin, Yu-Shu / Cheng, Po-Hsien / Huang, Kuei-Wen / Lin, Hsin-Chih / Chen, Miin-Jang

Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization

Lin, Yu-Shu / Cheng, Po-Hsien / Huang, Kuei-Wen / Lin, Hsin-Chih / Chen, Miin-Jang

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Check availability in my library

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Document information

Title:

Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization

Contributors:

Lin, Yu-Shu (author) / Cheng, Po-Hsien (author) / Huang, Kuei-Wen (author) / Lin, Hsin-Chih (author) / Chen, Miin-Jang (author)

Published in:

Applied surface science ; 443 ; 421-428

Publication date:

2018-01-01

Size:

8 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.44

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