High-Performance Top-Gated Graphene-Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-Dielectric-Constant Gate Dielectrics: Fid-Bau Portal

High-Performance Top-Gated Graphene-Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-Dielectric-Constant Gate Dielectrics

Liao, L. / Bai, J. / Lin, Y. C. / Qu, Y. / Huang, Y. / Duan, X.

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High-Performance Top-Gated Graphene-Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-Dielectric-Constant Gate Dielectrics

Liao, L. / Bai, J. / Lin, Y. C. / Qu, Y. / Huang, Y. / Duan, X.

High-Performance Top-Gated Graphene-Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-Dielectric-Constant Gate Dielectrics

Liao, L. / Bai, J. / Lin, Y. C. / Qu, Y. / Huang, Y. / Duan, X.

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Title:

High-Performance Top-Gated Graphene-Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-Dielectric-Constant Gate Dielectrics

Contributors:

Liao, L. (author) / Bai, J. (author) / Lin, Y. C. (author) / Qu, Y. (author) / Huang, Y. (author) / Duan, X. (author)

Published in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 22 ; 1941-1945

Publication date:

2010-01-01

Size:

5 pages

ISSN:

0935-9648

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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