High-Performance Top-Gated Graphene-Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-Dielectric-Constant Gate Dielectrics: Fid-Bau Portal

High-Performance Top-Gated Graphene-Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-Dielectric-Constant Gate Dielectrics

Liao, L. / Bai, J. / Lin, Y. C. / Qu, Y. / Huang, Y. / Duan, X.

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High-Performance Top-Gated Graphene-Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-Dielectric-Constant Gate Dielectrics

Liao, L. / Bai, J. / Lin, Y. C. / Qu, Y. / Huang, Y. / Duan, X.

High-Performance Top-Gated Graphene-Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-Dielectric-Constant Gate Dielectrics

Liao, L. / Bai, J. / Lin, Y. C. / Qu, Y. / Huang, Y. / Duan, X.

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Titel:

High-Performance Top-Gated Graphene-Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-Dielectric-Constant Gate Dielectrics

Beteiligte:

Liao, L. (Autor:in) / Bai, J. (Autor:in) / Lin, Y. C. (Autor:in) / Qu, Y. (Autor:in) / Huang, Y. (Autor:in) / Duan, X. (Autor:in)

Erschienen in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 22 ; 1941-1945

Erscheinungsdatum:

01.01.2010

Format / Umfang:

5 pages

ISSN:

0935-9648

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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