Use of SiCl~4 as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC: Fid-Bau Portal

Use of SiCl~4 as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC

Kotamraju, S.P. / Krishnan, B. / Melnychuk, G. / Koshka, Y.

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Use of SiCl~4 as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC

Kotamraju, S.P. / Krishnan, B. / Melnychuk, G. / Koshka, Y.

Use of SiCl~4 as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC

Kotamraju, S.P. / Krishnan, B. / Melnychuk, G. / Koshka, Y.

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Title:

Use of SiCl~4 as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC

Contributors:

Kotamraju, S.P. (author) / Krishnan, B. (author) / Melnychuk, G. (author) / Koshka, Y. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R. / Seyller, T.

Published in:

Silicon Carbide and Related Materials 2009 ; 111-114

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Kotamraju, S.P. / Melnychuk, G. / Koshka, Y. | British Library Online Contents | 2009

Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth

Das, H. / Melnychuk, G. / Koshka, Y. | British Library Online Contents | 2009

Gas phase equilibrium limitations on the vapor-liquid-solid growth of epitaxial silicon nanowires using SiCl~4

Eichfeld, S.M. / Shen, H. / Eichfeld, C.M. et al. | British Library Online Contents | 2011

Growth of silicon nanowires via nickel/SiCl~4 vapor-liquid-solid reaction

Wang, N. / Zhang, Y. / Zhu, J. | British Library Online Contents | 2001

4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method

Krishnan, B. / Merrett, N. / Melnychuk, G. et al. | British Library Online Contents | 2010