A platform for research: civil engineering, architecture and urbanism
Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth
Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth
Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth
Das, H. (author) / Melnychuk, G. (author) / Koshka, Y. (author)
MATERIALS SCIENCE FORUM ; 615/617 ; 121-124
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method
British Library Online Contents | 2009
|4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method
British Library Online Contents | 2010
|British Library Online Contents | 2007
|Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth
British Library Online Contents | 2009
|The selective epitaxial growth of silicon
British Library Online Contents | 1993
|