Gas phase equilibrium limitations on the vapor-liquid-solid growth of epitaxial silicon nanowires using SiCl~4: Fid-Bau Portal

Gas phase equilibrium limitations on the vapor-liquid-solid growth of epitaxial silicon nanowires using SiCl~4

Eichfeld, S.M. / Shen, H. / Eichfeld, C.M. / Mohney, S.E. / Dickey, E.C. / Redwing, J.M.

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Gas phase equilibrium limitations on the vapor-liquid-solid growth of epitaxial silicon nanowires using SiCl~4

Eichfeld, S.M. / Shen, H. / Eichfeld, C.M. / Mohney, S.E. / Dickey, E.C. / Redwing, J.M.

Gas phase equilibrium limitations on the vapor-liquid-solid growth of epitaxial silicon nanowires using SiCl~4

Eichfeld, S.M. / Shen, H. / Eichfeld, C.M. / Mohney, S.E. / Dickey, E.C. / Redwing, J.M.

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Document information

Title:

Gas phase equilibrium limitations on the vapor-liquid-solid growth of epitaxial silicon nanowires using SiCl~4

Contributors:

Eichfeld, S.M. (author) / Shen, H. (author) / Eichfeld, C.M. (author) / Mohney, S.E. (author) / Dickey, E.C. (author) / Redwing, J.M. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 26 ; 2207-2214

Publication date:

2011-01-01

Size:

8 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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