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Low-Temperature Homoepitaxial Growth with SiCl~4 Precursor Compared to HCl Assisted SiH~4-Based Growth
Low-Temperature Homoepitaxial Growth with SiCl~4 Precursor Compared to HCl Assisted SiH~4-Based Growth
Low-Temperature Homoepitaxial Growth with SiCl~4 Precursor Compared to HCl Assisted SiH~4-Based Growth
Kotamraju, S.P. (author) / Melnychuk, G. (author) / Koshka, Y. (author)
MATERIALS SCIENCE FORUM ; 615/617 ; 97-100
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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