4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness: Fid-Bau Portal

4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness

Aigo, T. / Sawamura, M. / Fujimoto, T. / Katsuno, M. / Yashiro, H. / Tsuge, H. / Nakabayashi, M. / Hoshino, T. / Ohtani, N.

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4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness

Aigo, T. / Sawamura, M. / Fujimoto, T. / Katsuno, M. / Yashiro, H. / Tsuge, H. / Nakabayashi, M. / Hoshino, T. / Ohtani, N.

4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness

Aigo, T. / Sawamura, M. / Fujimoto, T. / Katsuno, M. / Yashiro, H. / Tsuge, H. / Nakabayashi, M. / Hoshino, T. / Ohtani, N.

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Title:

4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness

Contributors:

Aigo, T. (author) / Sawamura, M. (author) / Fujimoto, T. (author) / Katsuno, M. (author) / Yashiro, H. (author) / Tsuge, H. (author) / Nakabayashi, M. (author) / Hoshino, T. (author) / Ohtani, N. (author) / Devaty, R. P.

Published in:

Silicon Carbide and Related Materials - 2005 ; 153-158

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Henry, A. / Leone, S. / Pedersen, H. et al. | British Library Online Contents | 2009

Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition

Leone, S. / Pedersen, H. / Henry, A. et al. | British Library Online Contents | 2009

High Growth Rate with Reduced Surface Roughness during On-Axis Homeopitaxial Growth of 4H-SiC

Hassan, J. / Bergman, J.P. / Henry, A. et al. | British Library Online Contents | 2011

Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth

Lee, K.Y. / Lee, S.Y. / Huang, C.F. | British Library Online Contents | 2010