P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates: Fid-Bau Portal

P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates

Lebedev, S.P. / Lebedev, A.A. / Abramov, P.L. / Bogdanova, E.V. / Nel son, D.K. / Oganesyan, G.A. / Tregubova, A.S. / Yakimova, R.

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P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates

Lebedev, S.P. / Lebedev, A.A. / Abramov, P.L. / Bogdanova, E.V. / Nel son, D.K. / Oganesyan, G.A. / Tregubova, A.S. / Yakimova, R.

P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates

Lebedev, S.P. / Lebedev, A.A. / Abramov, P.L. / Bogdanova, E.V. / Nel son, D.K. / Oganesyan, G.A. / Tregubova, A.S. / Yakimova, R.

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Title:

P-Type 3C-SiC Grown by Sublimation Epitaxy on 6H-SiC Substrates

Contributors:

Lebedev, S.P. (author) / Lebedev, A.A. (author) / Abramov, P.L. (author) / Bogdanova, E.V. (author) / Nel son, D.K. (author) / Oganesyan, G.A. (author) / Tregubova, A.S. (author) / Yakimova, R. (author)

Published in:

MATERIALS SCIENCE FORUM ; 615/617 ; 177-180

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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