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    A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy

    New search for: Stahlbush, R.E.
    New search for: Myers-Ward, R.L.
    New search for: VanMil, B.L.
    New search for: Gaskill, D.K.
    New search for: Eddy, C.R.
    New search for: Bauer, A.J.
    New search for: Friedrichs, P.
    New search for: Krieger, M.
    New search for: Pensl, G.
    New search for: Rupp, R.
    New search for: Seyller, T.

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    A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy

    New search for: Stahlbush, R.E.
    New search for: Myers-Ward, R.L.
    New search for: VanMil, B.L.
    New search for: Gaskill, D.K.
    New search for: Eddy, C.R.
    New search for: Bauer, A.J.
    New search for: Friedrichs, P.
    New search for: Krieger, M.
    New search for: Pensl, G.
    New search for: Rupp, R.
    New search for: Seyller, T.

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    A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy

    New search for: Stahlbush, R.E.
    New search for: Myers-Ward, R.L.
    New search for: VanMil, B.L.
    New search for: Gaskill, D.K.
    New search for: Eddy, C.R.
    New search for: Bauer, A.J.
    New search for: Friedrichs, P.
    New search for: Krieger, M.
    New search for: Pensl, G.
    New search for: Rupp, R.
    New search for: Seyller, T.

    Access

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    Document information
    Title:

    A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy

    Contributors:

    Stahlbush, R.E. (author) / Myers-Ward, R.L. (author) / VanMil, B.L. (author) / Gaskill, D.K. (author) / Eddy, C.R. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R.

    Published in:

    Silicon Carbide and Related Materials 2009 ; 271-276

    MATERIALS SCIENCE FORUM ; 645/648

    Publication date:

    2010-01-01

    Size:

    6 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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