Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer: Fid-Bau Portal

Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer

Ishikawa, Y. / Sugawara, Y. / Saitoh, H. / Danno, K. / Kawai, Y. / Shibata, N. / Hirayama, T. / Ikuhara, Y.

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Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer

Ishikawa, Y. / Sugawara, Y. / Saitoh, H. / Danno, K. / Kawai, Y. / Shibata, N. / Hirayama, T. / Ikuhara, Y.

Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer

Ishikawa, Y. / Sugawara, Y. / Saitoh, H. / Danno, K. / Kawai, Y. / Shibata, N. / Hirayama, T. / Ikuhara, Y.

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Title:

Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer

Contributors:

Ishikawa, Y. (author) / Sugawara, Y. (author) / Saitoh, H. (author) / Danno, K. (author) / Kawai, Y. (author) / Shibata, N. (author) / Hirayama, T. (author) / Ikuhara, Y. (author) / Bauer, A.J. / Friedrichs, P.

Published in:

Silicon Carbide and Related Materials 2009 ; 351-354

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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