Investigation of dislocations and defects in epitaxial lateral overgrown GaN by photoelectrochemical wet etching: Fid-Bau Portal

Investigation of dislocations and defects in epitaxial lateral overgrown GaN by photoelectrochemical wet etching

Wang, F. / Zhang, R. / Xiu, X. Q. / Chen, K. L. / Gu, S. L. / Shen, B. / Zheng, Y. D. / Kuech, T. F.

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Investigation of dislocations and defects in epitaxial lateral overgrown GaN by photoelectrochemical wet etching

Wang, F. / Zhang, R. / Xiu, X. Q. / Chen, K. L. / Gu, S. L. / Shen, B. / Zheng, Y. D. / Kuech, T. F.

Investigation of dislocations and defects in epitaxial lateral overgrown GaN by photoelectrochemical wet etching

Wang, F. / Zhang, R. / Xiu, X. Q. / Chen, K. L. / Gu, S. L. / Shen, B. / Zheng, Y. D. / Kuech, T. F.

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Document information

Title:

Investigation of dislocations and defects in epitaxial lateral overgrown GaN by photoelectrochemical wet etching

Contributors:

Wang, F. (author) / Zhang, R. (author) / Xiu, X. Q. (author) / Chen, K. L. (author) / Gu, S. L. (author) / Shen, B. (author) / Zheng, Y. D. (author) / Kuech, T. F. (author)

Published in:

MATERIALS LETTERS ; 57 ; 1365-1368

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0167-577X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1105 / 530

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