Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer: Fid-Bau Portal

Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer

Ishikawa, Y. / Sugawara, Y. / Saitoh, H. / Danno, K. / Kawai, Y. / Shibata, N. / Hirayama, T. / Ikuhara, Y.

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Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer

Ishikawa, Y. / Sugawara, Y. / Saitoh, H. / Danno, K. / Kawai, Y. / Shibata, N. / Hirayama, T. / Ikuhara, Y.

Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer

Ishikawa, Y. / Sugawara, Y. / Saitoh, H. / Danno, K. / Kawai, Y. / Shibata, N. / Hirayama, T. / Ikuhara, Y.

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Titel:

Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer

Beteiligte:

Ishikawa, Y. (Autor:in) / Sugawara, Y. (Autor:in) / Saitoh, H. (Autor:in) / Danno, K. (Autor:in) / Kawai, Y. (Autor:in) / Shibata, N. (Autor:in) / Hirayama, T. (Autor:in) / Ikuhara, Y. (Autor:in) / Bauer, A.J. / Friedrichs, P.

Erschienen in:

Silicon Carbide and Related Materials 2009 ; 351-354

MATERIALS SCIENCE FORUM ; 645/648

Erscheinungsdatum:

01.01.2010

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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