Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Dynamical Simulations of Dry Oxidation and NO Annealing of SiO~2/4H-SiC Interface on C-Face at 1500K: From First Principles
Dynamical Simulations of Dry Oxidation and NO Annealing of SiO~2/4H-SiC Interface on C-Face at 1500K: From First Principles
Dynamical Simulations of Dry Oxidation and NO Annealing of SiO~2/4H-SiC Interface on C-Face at 1500K: From First Principles
Ohnuma, T. (Autor:in) / Miyashita, A. (Autor:in) / Yoshikawa, M. (Autor:in) / Tsuchida, H. (Autor:in) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R. / Seyller, T.
01.01.2010
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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