Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy: Fid-Bau Portal

Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy

Kozono, K. / Hosoi, T. / Kagei, Y. / Kirino, T. / Mitani, S. / Nakano, Y. / Nakamura, T. / Shimura, T. / Watanabe, H.

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Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy

Kozono, K. / Hosoi, T. / Kagei, Y. / Kirino, T. / Mitani, S. / Nakano, Y. / Nakamura, T. / Shimura, T. / Watanabe, H.

Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy

Kozono, K. / Hosoi, T. / Kagei, Y. / Kirino, T. / Mitani, S. / Nakano, Y. / Nakamura, T. / Shimura, T. / Watanabe, H.

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Title:

Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy

Contributors:

Kozono, K. (author) / Hosoi, T. (author) / Kagei, Y. (author) / Kirino, T. (author) / Mitani, S. (author) / Nakano, Y. (author) / Nakamura, T. (author) / Shimura, T. (author) / Watanabe, H. (author) / Bauer, A.J.

Published in:

Silicon Carbide and Related Materials 2009 ; 821-824

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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