Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices: Fid-Bau Portal

Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices

Noborio, M. / Grieb, M. / Bauer, A.J. / Peters, D. / Friedrichs, P. / Suda, J. / Kimoto, T.

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Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices

Noborio, M. / Grieb, M. / Bauer, A.J. / Peters, D. / Friedrichs, P. / Suda, J. / Kimoto, T.

Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices

Noborio, M. / Grieb, M. / Bauer, A.J. / Peters, D. / Friedrichs, P. / Suda, J. / Kimoto, T.

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Title:

Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices

Contributors:

Noborio, M. (author) / Grieb, M. (author) / Bauer, A.J. (author) / Peters, D. (author) / Friedrichs, P. (author) / Suda, J. (author) / Kimoto, T. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M.

Published in:

Silicon Carbide and Related Materials 2009 ; 825-828

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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