Impact of physical and electrical thickness scaling on the reliability of plasma-nitrided gate dielectrics in a 90 nm SOI manufacturing technology: Fid-Bau Portal

Impact of physical and electrical thickness scaling on the reliability of plasma-nitrided gate dielectrics in a 90 nm SOI manufacturing technology

Geilenkeuser, R. / Wieczorek, K. / Mantei, T. / Graetsch, F. / Herrmann, L. / Weidner, J. O.

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Impact of physical and electrical thickness scaling on the reliability of plasma-nitrided gate dielectrics in a 90 nm SOI manufacturing technology

Geilenkeuser, R. / Wieczorek, K. / Mantei, T. / Graetsch, F. / Herrmann, L. / Weidner, J. O.

Impact of physical and electrical thickness scaling on the reliability of plasma-nitrided gate dielectrics in a 90 nm SOI manufacturing technology

Geilenkeuser, R. / Wieczorek, K. / Mantei, T. / Graetsch, F. / Herrmann, L. / Weidner, J. O.

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Title:

Impact of physical and electrical thickness scaling on the reliability of plasma-nitrided gate dielectrics in a 90 nm SOI manufacturing technology

Contributors:

Geilenkeuser, R. (author) / Wieczorek, K. (author) / Mantei, T. (author) / Graetsch, F. (author) / Herrmann, L. (author) / Weidner, J. O. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 118 ; 50-54

Publication date:

2005-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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