Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs: Fid-Bau Portal

Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs

Potbhare, S. / Akturk, A. / Goldsman, N. / Lelis, A.J. / Dhar, S. / Agarwal, A.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs

Potbhare, S. / Akturk, A. / Goldsman, N. / Lelis, A.J. / Dhar, S. / Agarwal, A.

Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs

Potbhare, S. / Akturk, A. / Goldsman, N. / Lelis, A.J. / Dhar, S. / Agarwal, A.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Document information

Title:

Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs

Contributors:

Potbhare, S. (author) / Akturk, A. (author) / Goldsman, N. (author) / Lelis, A.J. (author) / Dhar, S. (author) / Agarwal, A. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G.

Published in:

Silicon Carbide and Related Materials 2009 ; 975-978

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Suzuki, S. / Harada, S. / Kosugi, R. et al. | British Library Online Contents | 2002

Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays

Hishiki, S. / Reshanov, S.A. / Ohshima, T. et al. | British Library Online Contents | 2009

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets

Uhnevionak, V. / Strenger, C. / Burenkov, A. et al. | British Library Online Contents | 2013

Simulation study of interface traps and bulk traps in n^+^+GaN/InAlN/AlN/GaN high electron mobility transistors

Molnar, M. / Donoval, D. / Kuzmik, J. et al. | British Library Online Contents | 2014

Simulation study of interface traps and bulk traps in n^+^+GaN/InAlN/AlN/GaN high electron mobility transistors

Molnar, M. / Donoval, D. / Kuzmik, J. et al. | British Library Online Contents | 2014