Effect of radio frequency power on the inductively coupled plasma etched Al0.65Ga0.35N surface: Fid-Bau Portal

Effect of radio frequency power on the inductively coupled plasma etched Al0.65Ga0.35N surface

Bai, Y. / Liu, J. / Ma, P. / Li, B. / Zhu, J. / Guo, L. W. / Liu, X. Y.

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Effect of radio frequency power on the inductively coupled plasma etched Al0.65Ga0.35N surface

Bai, Y. / Liu, J. / Ma, P. / Li, B. / Zhu, J. / Guo, L. W. / Liu, X. Y.

Effect of radio frequency power on the inductively coupled plasma etched Al0.65Ga0.35N surface

Bai, Y. / Liu, J. / Ma, P. / Li, B. / Zhu, J. / Guo, L. W. / Liu, X. Y.

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Document information

Title:

Effect of radio frequency power on the inductively coupled plasma etched Al0.65Ga0.35N surface

Contributors:

Bai, Y. (author) / Liu, J. (author) / Ma, P. (author) / Li, B. (author) / Zhu, J. (author) / Guo, L. W. (author) / Liu, X. Y. (author)

Published in:

APPLIED SURFACE SCIENCE ; 256 ; 6254-6258

Publication date:

2010-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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